This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1557/JMR.2009.0006 in citations.
Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface
Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface
Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 degrees C. Depending on the S+ dose and the Ni thickness, we identified different nickel silicide phases. High quality and uniform epitaxial NiSi2 layers formed at temperatures above 700 degrees C...
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Personal Name(s): | Zhao, Q. T. |
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Mi, S.B. / Jia, C.-L. / Urban, C. / Sandow, C. / Habicht, S. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Mikrostrukturforschung; IFF-8 JARA-FIT; JARA-FIT |
Published in: | Journal of materials research, 24 (2009) S. 135139 |
Imprint: |
Warrendale, Pa.
MRS
2009
|
Physical Description: |
135139 |
DOI: |
10.1557/JMR.2009.0006 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Materials Research
24 |
Subject (ZB): | |
Publikationsportal JuSER |
Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 degrees C. Depending on the S+ dose and the Ni thickness, we identified different nickel silicide phases. High quality and uniform epitaxial NiSi2 layers formed at temperatures above 700 degrees C with a 20-nm Ni on high dose S+ implanted Si(100), whereas no epitaxy was observed for a 36-nm Ni layer. We assume that the presence of sulfur at the silicide/Si(100) interface favors the nucleation of the NiSi2 phase. The S atom distributions showed ultrasteep S depth profiles (3 nm/decade) in the silicon, which results from the snow-plow effect during silicidation and the segregation of S to the interface due to the low solubility of S in both Si and the silicide. |