This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1016/S1468-6996(03)00006-8 in citations.
Rashba effect in strained InGaAs/InP quantum wire structures
Rashba effect in strained InGaAs/InP quantum wire structures
Saved in:
Personal Name(s): | Schäpers, T. |
---|---|
Knobbe, J. / van der Hart, A. / Hardtdegen, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Science and technology of advanced materials, 4 (2003) S. 19 - 25 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2003
|
Physical Description: |
19 - 25 |
DOI: |
10.1016/S1468-6996(03)00006-8 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Science and Technology of Advanced Materials
4 |
Publikationsportal JuSER |
Description not available. |