Description: Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

This title appears in the Scientific Report : 2009

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (mu c-Si:...

Personal Name(s):	Finger, F.
	Astakhov, O. / Bronger, T. / Carius, R. / Chen, T. / Dasgupta, A. / Gordijn, A. / Houben, L. / Huang, Y. / Klein, S. / Luysberg, M. / Wang, H. / Xiao, L.
Contributing Institute:	Mikrostrukturforschung; IFF-8 JARA-ENERGY; JARA-ENERGY Photovoltaik; IEF-5
Published in:	Thin solid films, 517 (2009) S. 3507 - 3512
Imprint:	Amsterdam [u.a.] Elsevier 2009
Physical Description:	3507 - 3512
DOI:	10.1016/j.tsf.2009.01.115
Document Type:	Journal Article
Research Program:	Grundlagen für zukünftige Informationstechnologien Erneuerbare Energien
Series Title:	Thin Solid Films 517
Subject (ZB):	J Catalytic CVD Hot-wire CVD Sic alloys Thin film solar cells
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1016/j.tsf.2009.01.115 in citations.

Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (mu c-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the mu c-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%. (C) 2009 Elsevier B.V. All rights reserved.