This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1039/b418824a in citations.
Please use the identifier: http://hdl.handle.net/2128/1003 in citations.
Please use the identifier: http://hdl.handle.net/2128/2883 in citations.
Sr diffusion in undoped and La-doped SrTiO3 single crystals under oxidizing conditions
Sr diffusion in undoped and La-doped SrTiO3 single crystals under oxidizing conditions
Strontium titanate SrTiO3(100), (110), and (111) single crystals, undoped or donor doped with up to 1 at% La, were isothermally equilibrated at temperatures between 1523 and 1773 K in synthetic air followed by two different methods of Sr tracer deposition: ion implantation of Sr-87 and chemical solu...
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Personal Name(s): | Gömann, K. |
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Borchardt, G. / Schulz, M. / Gömann, A. / Maus-Friedrichs, W. / Lesage, B. / Kaitasov, O. / Hoffmann-Eifert, S. / Schneller, T. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physical Chemistry Chemical Physics, 7 (2005) 9, S. 2053 - 2060 |
Imprint: |
Cambridge
RSC Publ.
2005
|
Physical Description: |
2053 - 2060 |
DOI: |
10.1039/b418824a |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Physical Chemistry Chemical Physics
7 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1003 in citations.
Please use the identifier: http://hdl.handle.net/2128/2883 in citations.
Strontium titanate SrTiO3(100), (110), and (111) single crystals, undoped or donor doped with up to 1 at% La, were isothermally equilibrated at temperatures between 1523 and 1773 K in synthetic air followed by two different methods of Sr tracer deposition: ion implantation of Sr-87 and chemical solution deposition of a thin (SrTiO3)-Sr-86 layer. Subsequently, the samples were diffusion annealed under the same conditions as before. The initial and final depth profiles were measured by SIMS. For strong La-doping both tracer deposition methods yield similar Sr diffusion coefficients, whereas for weak doping the tracer seems to be immobile in the case of ion implantation. The Sr diffusivity does not depend on the crystal orientation, but shows strong dependency on the dopant concentration supporting the defect chemical model that under oxidizing conditions the donor is compensated by Sr vacancies. A comparison with literature data on Sr vacancy, Ti, and La diffusion in this system confirms the concept that all cations move via Sr vacancies. Cation diffusion is several orders of magnitude slower than oxygen diffusion. |