This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/1940 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1984087 in citations.
Hole drift-mobility Measurements in Microcrystalline Silicon
Hole drift-mobility Measurements in Microcrystalline Silicon
We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consi...
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Personal Name(s): | Dylla, T. |
---|---|
Finger, F. / Schiff, A. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Applied physics letters, 87 (2005) S. 032103 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
032103 |
DOI: |
10.1063/1.1984087 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Applied Physics Letters
87 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1984087 in citations.
We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm(2)/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm(2)/V s. (c) 2005 American Institute of Physics. |