This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/1942 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2011771 in citations.
Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layer
Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layer
Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon (mu c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic mu c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improv...
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Personal Name(s): | Mai, Y. |
---|---|
Klein, S. / Carius, R. / Stiebig, H. / Geng, X. / Finger, F. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Applied physics letters, 87 (2005) S. 073503 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
073503 |
DOI: |
10.1063/1.2011771 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Applied Physics Letters
87 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2011771 in citations.
Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon (mu c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic mu c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the mu c-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction mu c-Si:H solar cell. (C) 2005 American Institute of Physics. |