This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1063/1.2058206 in citations.
Please use the identifier: http://hdl.handle.net/2128/2017 in citations.
High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
We report on SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors (HFETs) were also investigated for comparison. Deposited 12 nm thick S...
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Personal Name(s): | Heidelberger, G. |
---|---|
Bernát, J. / Fox, P. T. / Lüth, H. / Kordos, P. / Marso, M. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 87 (2005) S. 143501 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
143501 |
DOI: |
10.1063/1.2058206 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
87 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/2017 in citations.
We report on SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors (HFETs) were also investigated for comparison. Deposited 12 nm thick SiO2 yielded an increase of the sheet carrier density from 7.6x10(12) to 9.2x10(12) cm(-2) and a subsequent increase of the static drain saturation current from 0.75 to 1.09 A/mm. The small-signal rf characterization of the MOSHFETs showed an extrinsic current gain cutoff frequency f(T) of 24 GHz and a maximum frequency of oscillation f(max) of 40 GHz. The output power of 6.7 W/mm of the MOSHFETs measured at 7 GHz is about two times larger than that of HFETs. The results obtained demonstrate the suitability of GaN-based MOSHFETs for high-power electronics. (C) 2005 American Institute of Physics. |