This title appears in the Scientific Report :
2005
An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure
An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure
Saved in:
Personal Name(s): | Marso, M. |
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Fox, P. T. / Heidelberger, G. / Bernát, J. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
6th International Conference on Nitride Semiconductors |
Imprint: |
2005
|
Conference: | Bremen, Germany 2005-08-28 |
Document Type: |
Conference Presentation |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |