This title appears in the Scientific Report :
2005
Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs
Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs
Saved in:
Personal Name(s): | Heidelberger, G. |
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Bernát, J. / Fox, P. T. / Marso, M. / Lüth, H. / Gregusova, D. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
14th Workshop on Heterostructure Technology |
Imprint: |
2005
|
Conference: | Smolenice Castle, Slovakia 2005-10-02 |
Document Type: |
Conference Presentation |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |