This title appears in the Scientific Report :
2004
MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry
MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry
Saved in:
Personal Name(s): | Kaluza, N. |
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Steins, R. / Hardtdegen, H. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
The Twelfth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XII) |
Imprint: |
2004
|
Conference: | Maui, Hawaii 2004-05-30 |
Document Type: |
Poster |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |