This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1149/1.3138722 in citations.
Liquid injection atomic layer deposition of crystalline TiO2 thin films with a smooth morphology from Ti(O-i-Pr)2(DPM)2
Liquid injection atomic layer deposition of crystalline TiO2 thin films with a smooth morphology from Ti(O-i-Pr)2(DPM)2
TiO2 thin films were grown at susceptor temperatures from 340 to 470 degrees C by liquid injection atomic layer deposition (ALD) using Ti(O-i-Pr)(2)(DPM)(2) [Ti(OC3H7)(2)(C11H19O2)(2), titanium dipivaloylmethanato di-isopropoxide] dissolved in ethylcyclohexane as a Ti source and H2O as an oxidant. T...
Saved in:
Personal Name(s): | Kim, S. K. |
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Hoffmann-Eifert, S. / Mi, S. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT Mikrostrukturforschung; IFF-8 |
Published in: | Journal of the Electrochemical Society, 156 (2009) S. D296 - D300 |
Imprint: |
Pennington, NJ
Electrochemical Society
2009
|
Physical Description: |
D296 - D300 |
DOI: |
10.1149/1.3138722 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of the Electrochemical Society
156 |
Subject (ZB): | |
Publikationsportal JuSER |
TiO2 thin films were grown at susceptor temperatures from 340 to 470 degrees C by liquid injection atomic layer deposition (ALD) using Ti(O-i-Pr)(2)(DPM)(2) [Ti(OC3H7)(2)(C11H19O2)(2), titanium dipivaloylmethanato di-isopropoxide] dissolved in ethylcyclohexane as a Ti source and H2O as an oxidant. The self-saturation growth behavior of the TiO2 films was confirmed up to 390 degrees C. Within the ALD window, the growth rate of the films increased from 0.022 nm/cycle at 340 degrees C to 0.046 nm/cycle at 390 degrees C, and the films exhibited a carbon content below 3 atom %. Due to the thermal decomposition of the precursor at 470 degrees C, the growth rate of the films largely increased and the film density decreased by the increase in the carbon content of the film. The films showed quite a smooth surface morphology over the whole range of growth temperatures. The increase in the film thickness did not significantly change the surface morphology of the films due to the formation of the crystalline phase even at an initial growth stage. The relative permittivity of the TiO2 films, which were crystallized into an anatase structure, was approximately 35-40. The films grown within the ALD window showed reasonable leakage current properties. |