This title appears in the Scientific Report :
2000
Molecular beam epitaxy of Ru2Si3 on silicon
Molecular beam epitaxy of Ru2Si3 on silicon
Epitaxial growth of Ru2Si3 films on Si(100) and Si(111) by molecular beam epitaxy (MBE) has been investigated. Films with thicknesses of approximate to 100 nm were grown by the so-called template technique. In a first step, a thin Ru film(approximate to 1 nm) was deposited at low temperatures. In si...
Saved in:
Personal Name(s): | Lenssen, D. |
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Lenk, S. / Bay, H. L. / Mantl, S. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Thin solid films, 371 (2000) S. 66 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2000
|
Physical Description: |
66 |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik |
Series Title: |
Thin Solid Films
371 |
Subject (ZB): | |
Publikationsportal JuSER |
Epitaxial growth of Ru2Si3 films on Si(100) and Si(111) by molecular beam epitaxy (MBE) has been investigated. Films with thicknesses of approximate to 100 nm were grown by the so-called template technique. In a first step, a thin Ru film(approximate to 1 nm) was deposited at low temperatures. In situ annealing lead to the formation of a Ru,Si, film that served as a template for a thicker him grown subsequently by co-evaporation of Ru and Si. The Ru/Si ratio and the growth temperature during the co-evaporation turned out to be of particular importance. Best films showed He ion channeling minimum yield values of approximate to 5%. The films consist of epitaxially oriented grains with dimensions up to 1 mu m after rapid thermal annealing. (C) 2000 Elsevier Science S.A. All rights reserved. |