This title appears in the Scientific Report :
2000
Investigation of {111} stacking faults and nanotwins in epitaxial BaTiO3 thin films by high-resolution transmission electron microscopy
Investigation of {111} stacking faults and nanotwins in epitaxial BaTiO3 thin films by high-resolution transmission electron microscopy
{111} stacking faults and nanotwins in epitaxial BaTiO3 thin films on MgO substrates have been investigated by high-resolution transmission electron microscopy. In many cases, the stacking faults and nanotwins were found to be accompanied by partial dislocations. These partial dislocations can be cl...
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Personal Name(s): | Lei, C. H. |
---|---|
Jia, C. L. / Siegert, M. / Urban, K. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI Institut für Festkörperforschung; IFF |
Published in: |
Philosophical magazine |
Imprint: |
London [u.a.]
Taylor & Francis
2000
|
Physical Description: |
371 - 380 |
Document Type: |
Journal Article |
Research Program: |
Festkörperforschung für die Informationstechnik Ionentechnik |
Series Title: |
Philosophical Magazine Letters
80 |
Subject (ZB): | |
Publikationsportal JuSER |
{111} stacking faults and nanotwins in epitaxial BaTiO3 thin films on MgO substrates have been investigated by high-resolution transmission electron microscopy. In many cases, the stacking faults and nanotwins were found to be accompanied by partial dislocations. These partial dislocations can be classified as two different types, analogous to the situation in the fee structure. One is of the Shockley type with the Burgers vector (a/3)< 112 >. The other is of the Frank type with the Burgers vector (a/3)< 111 >. The movements of both types of partial can lead to the {111} stacking faults and the {111} twins observed in these films. |