This title appears in the Scientific Report :
2005
Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Saved in:
Personal Name(s): | Kurakin, A. M. |
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Vitusevich, S. A. / Danylyuk, S. V. / Naumov, A. V. / Foxon, C. T. / Novikov, S. V. / Klein, N. / Lüth, H. / Belyaev, A. E. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
ICNS-6 |
Imprint: |
2005
|
Conference: | Bremen, Germany 2005-08-28 |
Document Type: |
Poster |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |