This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1142/S0219581X05003978 in citations.
Transport and noise features in AlGaN/GaN field effect transistors with nanometer-scaling gate length
Transport and noise features in AlGaN/GaN field effect transistors with nanometer-scaling gate length
Saved in:
Personal Name(s): | Vitusevich, S. A. |
---|---|
Petrychuk, M. V. / Danylyuk, S. V. / Kurakin, A. M. / Klein, N. / Lüth, H. / Belyaev, A. E. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | International journal of nanoscience, 04 (2005) S. 1001 - 1006 |
Imprint: |
Singapore
World Scientific Publishing
2005
|
Physical Description: |
1001 - 1006 |
DOI: |
10.1142/S0219581X05003978 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
International Journal of Nanoscience
4 |
Publikationsportal JuSER |
Description not available. |