This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2005.10.042 in citations.
Growth of strained Si on He ion implanted Si/SiGe heterostructures
Growth of strained Si on He ion implanted Si/SiGe heterostructures
He ion implantation into Si/SiGe heterostructures and annealing are used to produce strain-relaxed SiGe layers and simultaneously thin strained Si layers. In addition we present various studies of subsequent epitaxial overgrowth by chemical vapor deposition. Up to a thickness of 8 nm strained Si on...
Saved in:
Personal Name(s): | Buca, D. |
---|---|
Feste, S. F. / Holländer, B. / Mantl, S. / Loo, R. / Caymax, M. / Carius, R. / Schaefer, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 JARA-FIT; JARA-FIT Institut für Photovoltaik; IPV Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Solid state electronics, 50 (2006) S. 32 - 37 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2006
|
Physical Description: |
32 - 37 |
DOI: |
10.1016/j.sse.2005.10.042 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Solid-State Electronics
50 |
Subject (ZB): | |
Publikationsportal JuSER |
He ion implantation into Si/SiGe heterostructures and annealing are used to produce strain-relaxed SiGe layers and simultaneously thin strained Si layers. In addition we present various studies of subsequent epitaxial overgrowth by chemical vapor deposition. Up to a thickness of 8 nm strained Si on relaxed SiGe virtual substrates are made by strain transfer via dislocation propagation. An initial cubic-Si/strained-SiGe/Si(100) structure is transformed by He+ ion implantation and annealing into strained-Si/pdartially relaxed-SiGe/Si(100). These layers show low threading dislocation densities and very smooth surfaces. Such virtual substrates were overgrown with Si to achieve 20 nm of strained Si. A tensile strain of 0.8% was measured by Raman spectroscopy for an 18.5 nm sSi layer with a surface roughness of only 0.8 nm measured by AFM. The threading dislocation density was reduced by overgrowth of an additional strain adjusted SiGe layer and sSi layer. (c) 2005 Elsevier Ltd. All rights reserved. |