This title appears in the Scientific Report :
2006
Dislocation Based Resistive Switching in Insulating Perovskites - An Opportunity for Nanoscale Non-Volatile Memories?
Dislocation Based Resistive Switching in Insulating Perovskites - An Opportunity for Nanoscale Non-Volatile Memories?
Saved in:
Personal Name(s): | Szot, K. |
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Speier, W. / Bihlmayer, G. / Waser, R. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Theorie I; IFF-TH-I Wissenschaftlich-Technische Planung; WTP Elektronische Materialien; IFF-IEM |
Published in: |
International Symposium on Integrated Ferroelectrics |
Imprint: |
2006
|
Conference: | Hawaii 2006-04-23 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |