This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1109/TED.2006.875819 in citations.
Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs
Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs
In this paper, the influence of a 10-nm-thick silicon-dioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and metal-oxide-semiconductor HFETs (MOSHFETs), based on an undoped AlGaN/GaN heterostructure on a SiC substrate, was i...
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Personal Name(s): | Marso, M. |
---|---|
Heidelberger, G. / Indlerkofer, K. M. / Bernát, J. / Fox, A. / Kordos, P. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523 |
Imprint: |
2006
|
Physical Description: |
1517 - 1523 |
DOI: |
10.1109/TED.2006.875819 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
IEEE Transactions on Electron Devices
53 |
Subject (ZB): | |
Publikationsportal JuSER |
In this paper, the influence of a 10-nm-thick silicon-dioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and metal-oxide-semiconductor HFETs (MOSHFETs), based on an undoped AlGaN/GaN heterostructure on a SiC substrate, was investigated. Channel-conductivity results yield a nearly 50% increase of mobility in the MOSHFET samples compared to the unpassivated HFETs. This increase of the transport properties of the MOSHFET channel is confirmed by a similar 45% increase of the cutoff frequency, from 16.5 to 24 GHz. Hall measurements, however, show a 10% decrease of the mobility in the heterostructure with a SiO2 top layer. In this paper, the superior performance of the MOSHFET transistor, in contradiction to the Hall results, is attributed to the screening of the Coulomb scattering of the charged surface defects by the gate-metallization layer. |