This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1002/pssc.200565156 in citations.
Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Saved in:
Personal Name(s): | Kurakin, A. M. |
---|---|
Vitusevich, S. A. / Danylyuk, S. V. / Naumov, A. V. / Foxon, C. T. / Novikov, S. V. / Klein, N. / Lüth, H. / Belyaev, A. E. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica status solidi / C, 3 (2006) S. 2265 - 2269 |
Imprint: |
Berlin
Wiley-VCH
2006
|
Physical Description: |
2265 - 2269 |
DOI: |
10.1002/pssc.200565156 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi C
3 |
Publikationsportal JuSER |
Description not available. |