This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2006.03.016 in citations.
Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs
Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs
The effect of silicidation induced dopant segregation (DS) on the electrical behavior of silicon-on-insulator Schottky-barrier MOSFETs (SB-MOSFETs) is investigated. We use ion implantation with arsenic and boron and subsequent nickel silicidation to create highly n- and p-doped layers at the contact...
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Personal Name(s): | Zhang, M. |
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Knoch, J. / Zhao, Q. T. / Breuer, U. / Mantl, S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Solid state electronics, 50 (2006) S. 594 - 600 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2006
|
Physical Description: |
594 - 600 |
DOI: |
10.1016/j.sse.2006.03.016 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Solid-State Electronics
50 |
Subject (ZB): | |
Publikationsportal JuSER |
The effect of silicidation induced dopant segregation (DS) on the electrical behavior of silicon-on-insulator Schottky-barrier MOSFETs (SB-MOSFETs) is investigated. We use ion implantation with arsenic and boron and subsequent nickel silicidation to create highly n- and p-doped layers at the contact-channel interfaces. Devices with dopant segregation exhibit an inverse subthreshold slope of similar to 60 mV/dec and improved on-currents for n-type as well as p-type SB-MOSFETs due to a lowering of the effective Schottky-barrier height (SBH) compared to SB-MOSFETs without DS. In addition, our findings are supported by simulations. Temperature dependent measurements show that a reduced SBH as low as similar to 0.1 eV for electrons has been achieved. As a result, the dopant segregation technique greatly relaxes the requirement for low SB silicides to realize high performance SB-MOSFET devices. (c) 2006 Elsevier Ltd. All rights reserved. |