This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1002/adma.200900375 in citations.
Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges
Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current unders...
Saved in:
Personal Name(s): | Waser, R. |
---|---|
Dittmann, R. / Staikov, G. / Szot, K. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT |
Published in: | Advanced materials, 21 (2009) |
Imprint: |
Weinheim
Wiley-VCH
2009
|
DOI: |
10.1002/adma.200900375 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Advanced Materials
21 |
Subject (ZB): | |
Publikationsportal JuSER |
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined. |