This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1063/1.2364036 in citations.
Please use the identifier: http://hdl.handle.net/2128/2261 in citations.
Resistive switching of rose bengal devices: a molecular effect?
Resistive switching of rose bengal devices: a molecular effect?
The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varyi...
Saved in:
Personal Name(s): | Karthäuser, S. |
---|---|
Lüssem, B. / Weides, M. / Alba, M. / Besmehn, A. / Oligschlaeger, R. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM JARA-FIT; JARA-FIT Zentralabteilung für Chemische Analysen; ZCH Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Journal of applied physics, 100 (2006) S. 094504 |
Imprint: |
Melville, NY
American Institute of Physics
2006
|
Physical Description: |
094504 |
DOI: |
10.1063/1.2364036 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
100 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/2261 in citations.
The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface. (c) 2006 American Institute of Physics. |