This title appears in the Scientific Report :
2006
From thin relaxed SiGe buffer to strained silicon directly on oxide
From thin relaxed SiGe buffer to strained silicon directly on oxide
Saved in:
Personal Name(s): | Mantl, S. |
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Buca, D. / Hollaender, B. / Lenk, S. / Hueging, N. / Luysberg, M. / Carius, R. / Loo, R. / Caymax, M. R. / Schäfer, H. / Radu, I. / Reiche, M. / Christiansen, S. / Goesele, U. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF Center of Nanoelectronic Systems for Information Technology; CNI Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
210th Meeting of the Electrochemical Society (2006 SiGe Materials, Processing and Devises Symposium, 2006 Joint International Electrochemical Society Meeting) |
Imprint: |
2006
|
Conference: | Cancun, Mexico 2006-10-28 |
Document Type: |
Conference Presentation |
Research Program: |
Kondensierte Materie Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |