This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1021/nl8014395 in citations.
Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface r...
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Personal Name(s): | Richter, T. |
---|---|
Lüth, H. / Meijers, R. / Calarco, R. / Marso, M. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Nano letters, 8 (2008) S. 3056 - 3059 |
Imprint: |
Washington, DC
ACS Publ.
2008
|
Physical Description: |
3056 - 3059 |
PubMed ID: |
18687013 |
DOI: |
10.1021/nl8014395 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nano Letters
8 |
Subject (ZB): | |
Publikationsportal JuSER |
The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface recombination. This effect is used to determine the doping level of the nanowires and to complete and consolidate our previously developed surface recombination model for GaN nanowires. |