This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.solmat.2006.04.013 in citations.
The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys:Microstructure study
The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys:Microstructure study
The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly d...
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Personal Name(s): | Saleh, R. |
---|---|
Munisa, L. / Beyer, W. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Solar energy materials & solar cells, 90 (2006) S. 3449 - 3455 |
Imprint: |
Amsterdam
North Holland
2006
|
Physical Description: |
3449 - 3455 |
DOI: |
10.1016/j.solmat.2006.04.013 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Solar Energy Materials and Solar Cells
90 |
Subject (ZB): | |
Publikationsportal JuSER |
The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly depending on a broadening of network openings. Already at carbon concentrations of 25 at%, isolated voids disappeared presumably because interconnected voids are formed. A void formation is mainly attributed to an increase in hydrogen incorporation in the samples. (c) 2006 Elsevier B.V. All rights reserved. |