This title appears in the Scientific Report :
2005
Dopant segregation in Schottky barrier SOI-MOSFETs
Dopant segregation in Schottky barrier SOI-MOSFETs
Saved in:
Personal Name(s): | Zhang, M. |
---|---|
Knoch, J. / Zhao, Q. T. / Lenk, S. / Appenzeller, J. / Breuer, U. / Mantl, S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
Proceedings of the 6th International Conference on Ultimate Integration of Silicon. - 2005. - S. 23 - 26 |
Imprint: |
2005
|
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |