This title appears in the Scientific Report :
2006
Please use the identifier:
http://hdl.handle.net/2128/2623 in citations.
Please use the identifier: http://dx.doi.org/10.1002/pssc.200565121 in citations.
The effect of carrier gas on GaN epilayer characteristics
The effect of carrier gas on GaN epilayer characteristics
Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically...
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Personal Name(s): | Cho, Y. S. |
---|---|
Hardtdegen, H. / Kaluza, N. / Thillosen, N. / Steins, R. / Sofer, Z. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica status solidi / C, 3 (2006) S. 1408 - 1411 |
Imprint: |
Berlin
Wiley-VCH
2006
|
Physical Description: |
1408 - 1411 |
DOI: |
10.1002/pssc.200565121 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi C
3 |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1002/pssc.200565121 in citations.
Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |