This title appears in the Scientific Report :
2006
First Growth of Cr-doped GaN Layers by MOVPE for Spintronics
First Growth of Cr-doped GaN Layers by MOVPE for Spintronics
Saved in:
Personal Name(s): | Kaluza, N. |
---|---|
Cho, Y. S. / Thillosen, N. / von der Ahe, M. / Guzenko, V. / Schaepers, T. / Hardtdegen, H. / Breuer, U. / Ghadimi, R. / Fecioru-Morariu, M. / Beschoten, B. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
MRS Fall Meeting |
Imprint: |
2006
|
Conference: | Boston, Mass. 2006-11-27 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |