This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1109/TNANO.2006.885016 in citations.
A novel reference scheme for reading passive resistive crossbar memories
A novel reference scheme for reading passive resistive crossbar memories
A great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special...
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Personal Name(s): | Mustafa, J. |
---|---|
Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on nanotechnology, 5 (2006) S. 687 - 691 |
Imprint: |
New York, NY
IEEE
2006
|
Physical Description: |
687 - 691 |
DOI: |
10.1109/TNANO.2006.885016 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
IEEE Transactions on Nanotechnology
5 |
Subject (ZB): | |
Publikationsportal JuSER |
A great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special importance, since they can be scaled into the nanometer range without losing their functionality. This work is concerned with a novel scheme for generating reference voltages for the read operation. The scheme can be used with any passive crossbar based memory, regardless of the materials used for the implementation of the memory elements. |