This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.physb.2005.12.046 in citations.
Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradi...
Saved in:
Personal Name(s): | Emtsev, V. V. |
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Ehrhart, P. / Emtsev, K. V. / Poloskin, D. S. / Dedek, U. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM |
Published in: | Physica / B, 376-377 (2006) S. 173 - 176 |
Imprint: |
Amsterdam
North-Holland Physics Publ.
2006
|
Physical Description: |
173 - 176 |
DOI: |
10.1016/j.physb.2005.12.046 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Physica B: Condensed Matter
376-377 |
Subject (ZB): | |
Publikationsportal JuSER |
Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T = 300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T = 800 K. (c) 2005 Published by Elsevier B.V. |