This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.aeue.2005.09.005 in citations.
Capacitive-resistive nondriven plateline cell architecture for RRAM technology
Capacitive-resistive nondriven plateline cell architecture for RRAM technology
A new memory cell concept, which is appropriate for the use with resistive hysteretic memory elements is introduced. Resistive memories are one of the main memory development streams today. The introduced concept can be used to facilitate the integration with current CMOS technology, where no platel...
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Personal Name(s): | Mustafa, J. |
---|---|
Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI Elektronische Materialien; IFF-6 |
Published in: | AEU - International Journal of Electronics and Communications, 60 (2006) S. 459 - 461 |
Imprint: |
München
Elsevier
2006
|
Physical Description: |
459 - 461 |
DOI: |
10.1016/j.aeue.2005.09.005 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
AEÜ : International Journal of Electronics and Communications
60 |
Subject (ZB): | |
Publikationsportal JuSER |
A new memory cell concept, which is appropriate for the use with resistive hysteretic memory elements is introduced. Resistive memories are one of the main memory development streams today. The introduced concept can be used to facilitate the integration with current CMOS technology, where no plateline is required. This is accomplished by using a capacitor, which is serially connected to the resistive element. (c) 2005 Elsevier GmbH. All rights reserved. |