Description: Effect of filament and substrate temperatures on the structural and electrical properties of SIC thin films grown by the HWCVD technique

This title appears in the Scientific Report : 2008

Effect of filament and substrate temperatures on the structural and electrical properties of SIC thin films grown by the HWCVD technique

The effect of varying filament and substrate temperatures on the structure and electrical conductivity of crystalline SiC films prepared by HWCVD technique are described in this paper. At a constant filament temperature, the electrical conductivity of the SiC films increases with increasing substrat...

Personal Name(s):	Dasgupta, A.
	Huang, Y. / Houben, L. / Klein, S. / Finger, F. / Carius, R. / Luysberg, M.
Contributing Institute:	Photovoltaik; IEF-5 Mikrostrukturforschung; IFF-8
Published in:	Thin solid films, 516 (2008) S. 622 - 625
Imprint:	Amsterdam [u.a.] Elsevier 2008
Physical Description:	622 - 625
DOI:	10.1016/j.tsf.2007.06.077
Document Type:	Journal Article
Research Program:	Kondensierte Materie Grundlagen für zukünftige Informationstechnologien Erneuerbare Energien
Series Title:	Thin Solid Films 516
Subject (ZB):	J silicon carbide hot-wire deposition microstructure Raman spectroscopy electron microscopy
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1016/j.tsf.2007.06.077 in citations.

The effect of varying filament and substrate temperatures on the structure and electrical conductivity of crystalline SiC films prepared by HWCVD technique are described in this paper. At a constant filament temperature, the electrical conductivity of the SiC films increases with increasing substrate temperature. However, TEM studies show that there is no change in the size of the SiC columnar grains. On the other hand, a significant variation in filament temperature at constant substrate temperature leads to a variation of structure and conductivity. Raman spectroscopy and TEM studies reveal that crystallinity improves with increase in filament temperature. Furthermore, a mu c-Si phase exists alongside SiC at low filament temperature (1750 degrees C). (C) 2007 Elsevier B.V. All rights reserved.