Description: Microstructure of highly crystalline silicon carbide thin films grown by HWCVD technique

This title appears in the Scientific Report : 2008

Microstructure of highly crystalline silicon carbide thin films grown by HWCVD technique

Highly crystalline silicon carbide films were synthesised by HWCVD technique. Raman spectroscopic studies show that the SiC films contain crystalline SiC and also carbon phases. Carbon is graphitic at higher chamber pressures (<= 50 Pa) and resembles diamond-like carbon at low pressure (5 Pa). Cr...

Personal Name(s):	Dasgupta, A.
	Klein, S. / Houben, L. / Carius, R. / Finger, F. / Luysberg, M.
Contributing Institute:	Photovoltaik; IEF-5 Mikrostrukturforschung; IFF-8
Published in:	Thin solid films, 516 (2008) S. 618 - 621
Imprint:	Amsterdam [u.a.] Elsevier 2008
Physical Description:	618 - 621
DOI:	10.1016/j.tsf.2007.06.055
Document Type:	Journal Article
Research Program:	Kondensierte Materie Grundlagen für zukünftige Informationstechnologien Erneuerbare Energien
Series Title:	Thin Solid Films 516
Subject (ZB):	J silicon carbide hot-wire deposition microstructure Raman spectroscopy electron microscopy
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1016/j.tsf.2007.06.055 in citations.

Highly crystalline silicon carbide films were synthesised by HWCVD technique. Raman spectroscopic studies show that the SiC films contain crystalline SiC and also carbon phases. Carbon is graphitic at higher chamber pressures (<= 50 Pa) and resembles diamond-like carbon at low pressure (5 Pa). Cross-section TEM results show a columnar morphology of the crystallites, with typical column diameters up to similar to 50 nm. Transmission electron diffraction patterns reveal SiC in its cubic and hexagonal SiC phases and the C diamond phase at low pressure. Annealing at 1000 degrees C for 1 h results in enhancement of crystallite size without nucleation of new phases. (C) 2007 Elsevier B.V. All rights reserved.