This title appears in the Scientific Report :
2008
Please use the identifier:
http://hdl.handle.net/2128/17408 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2905268 in citations.
Temperature-dependence of the phase-coherence length in InN nanowires
Temperature-dependence of the phase-coherence length in InN nanowires
We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root mean square and the c...
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Personal Name(s): | Blömers, C. |
---|---|
Schäpers, T. / Richter, T. / Calarco, R. / Lüth, H. / Marso, M. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Halbleiter-Nanoelektronik; IBN-1 |
Published in: | Applied physics letters, 92 (2008) |
Imprint: |
Melville, NY
American Institute of Physics
2008
|
DOI: |
10.1063/1.2905268 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
92 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2905268 in citations.
We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root mean square and the correlation field of the conductance fluctuations at various temperatures, the phase-coherence length was determined. (C) 2008 American Institute of Physics. |