This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2009.01.029 in citations.
Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells
Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells
To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p type microcrystal line silicon (mu c-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of mu c-SiC:H films and co...
Saved in:
Personal Name(s): | Chen, T. |
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Huang, Y. / Wang, H. / Yang, D. / Dasgupta, A. / Carius, R. / Finger, F. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Thin solid films, 517 (2009) S. 3513 - 3515 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2009
|
Physical Description: |
3513 - 3515 |
DOI: |
10.1016/j.tsf.2009.01.029 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
517 |
Subject (ZB): | |
Publikationsportal JuSER |
To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p type microcrystal line silicon (mu c-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of mu c-SiC:H films and corresponding solar cells were studied. The filament temperature T-F has a strong effect on the structure and optical properties of mu c-SiC:H films. Using these mu c-SiC:H films prepared in the range of T-F=1800-2000 degrees C as window layers in n-side illuminated mu c-Si:H solar cells, cell efficiencies of above 8.0% were achieved with 1 mu m thick mu c-Si:H absorber layer and Ag back reflector. Crown Copyright (C) 2009 Plublished by Elsevier B.V. All rights reserved. |