This title appears in the Scientific Report :
2009
Please use the identifier:
http://hdl.handle.net/2128/11012 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.80.245314 in citations.
Three-to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy
Three-to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy
The electrostatic screening of localized electric charges on semiconductor surfaces is investigated quantitatively by statistically analyzing the spatial distribution of thermally formed positively charged anion surface vacancies on GaAs and InP(110) surfaces. Two screening regimes are found: at low...
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Personal Name(s): | Laubsch, A. |
---|---|
Urban, K. / Ebert, Ph. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-8 JARA-FIT; JARA-FIT |
Published in: | Physical Review B Physical review / B, 80 80 (2009 2009) 24 24, S. 245314 245314 |
Imprint: |
College Park, Md.
APS
2009
|
Physical Description: |
245314 |
DOI: |
10.1103/PhysRevB.80.245314 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
80 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.80.245314 in citations.
The electrostatic screening of localized electric charges on semiconductor surfaces is investigated quantitatively by statistically analyzing the spatial distribution of thermally formed positively charged anion surface vacancies on GaAs and InP(110) surfaces. Two screening regimes are found: at low vacancy concentrations the vacancy charges are found to be three-dimensionally screened by bulk charge carriers. The corresponding screening length, which increases strongly with decreasing carrier concentration, is best described by the classical bulk screening length evaluated with a surface dielectric constant. With increasing vacancy concentration at given bulk carrier concentration, a three- to two-dimensional screening transition occurs. At high vacancy concentrations, the screening is found to be governed by charge carriers located in a two-dimensional surface vacancy defect band, which is partially filled due to the vacancy-induced surface band bending. |