This title appears in the Scientific Report :
2016
Please use the identifier:
http://hdl.handle.net/2128/17098 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.4942656 in citations.
Deposition and characterization of B$_{4}$C/CeO$_{2}$ multilayers at 6.x nm extreme ultraviolet wavelengths
Deposition and characterization of B$_{4}$C/CeO$_{2}$ multilayers at 6.x nm extreme ultraviolet wavelengths
New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovat...
Saved in:
Personal Name(s): | Sertsu, M. G. (Corresponding author) |
---|---|
Giglia, A. / Brose, S. / Park, D. / Wang, Z. S. / Mayer, Joachim / Juschkin, Larissa / Nicolosi, P. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of applied physics, 119 (2016) 9, S. 095301 - |
Imprint: |
Melville, NY
American Inst. of Physics
2016
|
DOI: |
10.1063/1.4942656 |
Document Type: |
Journal Article |
Research Program: |
Addenda |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4942656 in citations.
New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet(EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha(8 keV) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers.Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design. |