This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1002/aelm.201500460 in citations.
Electronic Properties of Complex Self-Assembled InAs Nanowire Networks
Electronic Properties of Complex Self-Assembled InAs Nanowire Networks
Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic tem...
Saved in:
Personal Name(s): | Heedt, Sebastian (Corresponding author) |
---|---|
Vakulov, Daniil / Rieger, Torsten / Rosenbach, Daniel / Trellenkamp, Stefan / Grützmacher, Detlev / Lepsa, Mihail Ion / Schäpers, Thomas | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Advanced Electronic Materials, 2 (2016) 6, S. 1500460 - |
Imprint: |
Chichester
Wiley
2016
|
DOI: |
10.1002/aelm.201500460 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic temperatures. The cross configuration is utilized to compare transport properties extracted from the Hall effect and field-effect transistor characterizations. |