This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1002/aelm.201500460 in citations.
Electronic Properties of Complex Self-Assembled InAs Nanowire Networks
Electronic Properties of Complex Self-Assembled InAs Nanowire Networks
Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic tem...
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Personal Name(s): | Heedt, Sebastian (Corresponding author) |
---|---|
Vakulov, Daniil / Rieger, Torsten / Rosenbach, Daniel / Trellenkamp, Stefan / Grützmacher, Detlev / Lepsa, Mihail Ion / Schäpers, Thomas | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Advanced Electronic Materials, 2 (2016) 6, S. 1500460 - |
Imprint: |
Chichester
Wiley
2016
|
DOI: |
10.1002/aelm.201500460 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
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