Description: Correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs wires measured with scanning gate microscopy

This title appears in the Scientific Report : 2016

Correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs wires measured with scanning gate microscopy

We investigate the correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of...

Personal Name(s):	Zhukov, A. A. (Corresponding author)
	Volk, Christian / Winden, A. / Hardtdegen, H. / Schäpers, Th.
Contributing Institute:	Halbleiter-Nanoelektronik; PGI-9
Published in:	JETP letters, 101 (2015) 9, S. 628 - 632
Imprint:	Heidelberg [u.a.] Springer 2015
DOI:	10.1134/S0021364015090143
Document Type:	Journal Article
Research Program:	Controlling Electron Charge-Based Phenomena
Subject (ZB):	Condensed Matter Physics > 0
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1134/S0021364015090143 in citations.

We investigate the correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and “crystal lattice mismatch” defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.