This title appears in the Scientific Report :
2016
Cross-sectional scanning Tunneling microscopy of GaN and InN epitaxial layers: Defects, surface states and Fermi-Level pinning
Cross-sectional scanning Tunneling microscopy of GaN and InN epitaxial layers: Defects, surface states and Fermi-Level pinning
Saved in:
Personal Name(s): | Ebert, Philipp (Corresponding author) |
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Contributing Institute: |
Mikrostrukturforschung; PGI-5 |
Imprint: |
2016
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Conference: | 20th International Vacuum Congress (IVC-20), Busan (Süd Korea), 2016-08-21 - 2016-08-26 |
Document Type: |
Conference Presentation |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
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