This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1088/0953-8984/28/49/495501 in citations.
Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers
Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers
Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values o...
| Personal Name(s): | Weyrich, C. |
|---|---|
| Drögeler, M. / Kampmeier, J. / Eschbach, M. / Mussler, G. / Merzenich, T. / Stoica, T. / Batov, I. E. / Schubert, J. / Plucinski, L. / Beschoten, B. / Schneider, C. M. / Stampfer, C. / Grützmacher, D. / Schäpers, Thomas (Corresponding author) | |
| Contributing Institute: |
Elektronische Eigenschaften; PGI-6 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
| Published in: | Journal of physics / Condensed matter, 28 (2016) 49, S. 495501 - |
| Imprint: |
Bristol
IOP Publ.
2016
|
| DOI: |
10.1088/0953-8984/28/49/495501 |
| PubMed ID: |
27749271 |
| Document Type: |
Journal Article |
| Research Program: |
Controlling Electron Charge-Based Phenomena |
| Publikationsportal JuSER |
|
Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy.Scanning Raman spectroscopy reveals that the (Bi1−xSbx)2Te3 layers with an intermediateSb content show spatial composition inhomogeneities. The observed spectra broadening inangular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena.Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift ofthe Fermi level from the conduction band to the valence band. This shift is also confirmed bycorresponding magnetotransport measurements where the conductance changes from n- top-type. In this transition region, an increase of the resistivity is found, indicating a locationof the Fermi level within the band gap region. More detailed measurements in the transitionregion reveals that the transport takes place in two independent channels. By means of a gateelectrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermilevel within the topologically protected surface states. |