This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2015.02.018 in citations.
Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity
Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity
Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradation of the inverter output voltage is observed due t...
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Personal Name(s): | Richter, S. (Corresponding author) |
---|---|
Trellenkamp, S. / Schäfer, A. / Hartmann, J. M. / Bourdelle, K. K. / Zhao, Q. T. / Mantl, S. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Solid state electronics, 108 (2015) S. 97 - 103 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2015
|
DOI: |
10.1016/j.sse.2015.02.018 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Subject (ZB): | |
Publikationsportal JuSER |
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