Stacking fault energy in silicon
Stacking fault energy in silicon
In hexagonal networks in the (111) plane of silicon both families of nodes are "extended." This implies that intrinsic as well as extrinsic slacking faults have small energy. The two stacking fault energies are $\thicksim$50 ergs/cm$^{2}$ and $\thicksim$60 ergs/cm$^{2}$. lt is not possible...
Saved in:
Personal Name(s): | Aerts, E. |
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Delavignette, P. / Siems, R. / Amelinckx, S. | |
Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
Imprint: |
Jülich
Kernforschungsanlage Jülich, Verlag
1963
|
Physical Description: |
p. 3078-80 |
Document Type: |
Report Book |
Research Program: |
ohne Topic |
Series Title: |
Berichte der Kernforschungsanlage Jülich
107 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
In hexagonal networks in the (111) plane of silicon both families of nodes are "extended." This implies that intrinsic as well as extrinsic slacking faults have small energy. The two stacking fault energies are $\thicksim$50 ergs/cm$^{2}$ and $\thicksim$60 ergs/cm$^{2}$. lt is not possible at present lo decide which energy belongs to which stacking fault. Both the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope. |