This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.96.035301 in citations.
Please use the identifier: http://hdl.handle.net/2128/15288 in citations.
Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)
Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)
We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1×1) surface, we find Te to form a Te/Si(111)-(1×1) reconstruction to saturate the substrate bonds. A prob...
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Personal Name(s): | Lüpke, Felix |
---|---|
Just, Sven / Bihlmayer, Gustav / Lanius, Martin / Luysberg, Martina / Doležal, Jiří / Neumann, Elmar / Cherepanov, Vasily / Ošt'ádal, Ivan / Mussler, Gregor / Grützmacher, Detlev / Voigtländer, Bert (Corresponding author) | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 Quanten-Theorie der Materialien; PGI-1 Quantum Nanoscience; PGI-3 JARA - HPC; JARA-HPC JARA-FIT; JARA-FIT Quanten-Theorie der Materialien; IAS-1 Helmholtz - Nanofacility; HNF Physik Nanoskaliger Systeme; ER-C-1 |
Published in: | Physical Review B Physical review / B, 96 96 (2017 2017) 3 3, S. 035301 035301 |
Imprint: |
Woodbury, NY
Inst.
2017
|
DOI: |
10.1103/PhysRevB.96.035301 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/15288 in citations.
We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1×1) surface, we find Te to form a Te/Si(111)-(1×1) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1×1) interface conductivity of σTe2D=2.6(5)×10−7S/□, which is small compared to the typical conductivity of topological surface states. |