This title appears in the Scientific Report : 2017 

Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing
Glass, Stefan (Corresponding author)
von den Driesch, Nils / Strangio, Sebastiano / Schulte-Braucks, Christian / Rieger, Torsten / Buca, Dan Mihai / Mantl, Siegfried / Zhao, Qing-Tai
Halbleiter-Nanoelektronik; PGI-9
2017
2017 International Conference on Solid State Devices and Materials, Sendai (Japan), 2017-09-19 - 2017-09-22
Conference Presentation
ohne Topic
Energy Efficient Tunnel FET Switches and Circuits
OpenAccess
OpenAccess
Please use the identifier: http://hdl.handle.net/2128/15365 in citations.
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520 |a In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained. 
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