Description: Locally probing the screening potential at a metal-semiconductor interface

This title appears in the Scientific Report : 2010

Locally probing the screening potential at a metal-semiconductor interface

The screened Coulomb potential of a point charge located at buried Ag/Si interface was quantitatively investigated using scanning tunneling microscopy and spectroscopy at 77 K, through Ag(111)-1 x 1 films epitaxially grown on a Si(111)-root 3 x root 3-Ga substrate. On top of the Ag films, we succeed...

Personal Name(s):	Jiang, Y.
	Guo, J.D. / Ebert, Ph. / Wang, E.G. / Wu, K.
Contributing Institute:	Mikrostrukturforschung; IFF-8
Published in:	Physical review / B, 81 (2010) S. 033405
Imprint:	College Park, Md. APS 2010
Physical Description:	033405
DOI:	10.1103/PhysRevB.81.033405
Document Type:	Journal Article
Research Program:	Grundlagen für zukünftige Informationstechnologien
Series Title:	Physical Review B 81
Subject (ZB):	J
Link:	Get full text OpenAccess OpenAccess
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.81.033405 in citations.
Please use the identifier: http://hdl.handle.net/2128/11002 in citations.

The screened Coulomb potential of a point charge located at buried Ag/Si interface was quantitatively investigated using scanning tunneling microscopy and spectroscopy at 77 K, through Ag(111)-1 x 1 films epitaxially grown on a Si(111)-root 3 x root 3-Ga substrate. On top of the Ag films, we succeeded to image the two-dimensional screening potential around the individual charged Si dopants located at the Ag/Si interface. The interface screening length was derived experimentally, which agrees well with a semimicroscopic theoretical model.