This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.81.033405 in citations.
Please use the identifier: http://hdl.handle.net/2128/11002 in citations.
Locally probing the screening potential at a metal-semiconductor interface
Locally probing the screening potential at a metal-semiconductor interface
The screened Coulomb potential of a point charge located at buried Ag/Si interface was quantitatively investigated using scanning tunneling microscopy and spectroscopy at 77 K, through Ag(111)-1 x 1 films epitaxially grown on a Si(111)-root 3 x root 3-Ga substrate. On top of the Ag films, we succeed...
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Personal Name(s): | Jiang, Y. |
---|---|
Guo, J.D. / Ebert, Ph. / Wang, E.G. / Wu, K. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-8 |
Published in: | Physical Review B Physical review / B, 81 81 (2010 2010) 3 3, S. 033405 033405 |
Imprint: |
College Park, Md.
APS
2010
|
Physical Description: |
033405 |
DOI: |
10.1103/PhysRevB.81.033405 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
81 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/11002 in citations.
The screened Coulomb potential of a point charge located at buried Ag/Si interface was quantitatively investigated using scanning tunneling microscopy and spectroscopy at 77 K, through Ag(111)-1 x 1 films epitaxially grown on a Si(111)-root 3 x root 3-Ga substrate. On top of the Ag films, we succeeded to image the two-dimensional screening potential around the individual charged Si dopants located at the Ag/Si interface. The interface screening length was derived experimentally, which agrees well with a semimicroscopic theoretical model. |