This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1007/978-3-030-15612-1_2 in citations.
Conductive AFM for nanoscale analysis of high-k dielectric metal oxides
Conductive AFM for nanoscale analysis of high-k dielectric metal oxides
Conductive atomic force microscopy has become a valuable tool for investigation of electronic transport properties with utmost lateral resolution. In this chapter, we prevent an overview about C-AFM applications to high-k semiconductors, which are key materials for future energy-efficient informatio...
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Personal Name(s): | Rodenbücher, Christian (Corresponding author) |
---|---|
Wojtyniak, Marcin / Szot, K. | |
Contributing Institute: |
Elektrochemische Verfahrenstechnik; IEK-14 JARA-FIT; JARA-FIT Elektronische Materialien; PGI-7 Technoökonomische Systemanalyse; IEK-3 |
Published in: |
Electrical Atomic Force Microscopy for Nanoelectronics |
Imprint: |
Cham
Springer
2019
|
Physical Description: |
29 - 70 |
ISBN: |
978-3-030-15611-4 (print) 978-3-030-15612-1 (electronic) |
DOI: |
10.1007/978-3-030-15612-1_2 |
Document Type: |
Contribution to a book |
Research Program: |
Fuel Cells |
Series Title: |
NanoScience and Technology
|
Publikationsportal JuSER |
Conductive atomic force microscopy has become a valuable tool for investigation of electronic transport properties with utmost lateral resolution. In this chapter, we prevent an overview about C-AFM applications to high-k semiconductors, which are key materials for future energy-efficient information technology. |