Description: Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

This title appears in the Scientific Report : 2018

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) G...

Personal Name(s):	Ledentsov, N. N. (Corresponding author)
	Shchukin, V. A. / Shernyakov, Yu. M. / Kulagina, M. M. / Payusov, A. S. / Gordeev, N. Yu. / Maximov, M. V. / Zhukov, A. E. / Denneulin, T. / Cherkashin, N.
Contributing Institute:	Mikrostrukturforschung; PGI-5
Published in:	Optics express, 26 (2018) 11, S. 13985-13994
Imprint:	Washington, DC Soc. 2018
DOI:	10.1364/OE.26.013985
PubMed ID:	29877443
Document Type:	Journal Article
Research Program:	Controlling Configuration-Based Phenomena
Link:	OpenAccess OpenAccess
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1364/OE.26.013985 in citations.
Please use the identifier: http://hdl.handle.net/2128/19570 in citations.

We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensile-strained InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.